Low In solubility and band offsets in the small-$x$ $β$-Ga$_2$O$_3$/(Ga$_{1-x}$In$_x$)$_2$O$_3$ system

Maria Barbara Maccioni; Francesco Ricci; Vincenzo Fiorentini

doi:10.7567/APEX.8.021102

paper

Low In solubility and band offsets in the small- $x$ $β$ -Ga $_{2}$ O $_{3}$ /(Ga $_{1 - x}$ In $_{x}$ ) $_{2}$ O $_{3}$ system

arXiv:1412.1323 · doi:10.7567/APEX.8.021102

Abstract

Based on first-principles calculations, we show that the maximum reachable concentration $x$ in the (Ga $_{1 - x}$ In $_{x}$ ) $_{2}$ O $_{3}$ alloy in the low- $x$ regime (i.e. In solubility in $β$ -Ga $_{2}$ O $_{3}$ ) is around 10%. We then calculate the band alignment at the (100) interface between $β$ -Ga $_{2}$ O $_{3}$ and (Ga $_{1 - x}$ In $_{x}$ ) $_{2}$ O $_{3}$ at 12%, the nearest computationally treatable concentration. The alignment is strongly strain-dependent: it is of type-B staggered when the alloy is epitaxial on Ga $_{2}$ O $_{3}$ , and type-A straddling in a free-standing superlattice. Our results suggest a limited range of applicability of low-In-content GaInO alloys.

3 pages, 3 figures

References in corpus (1)

Structure and gap of low- $x$ (Ga $_{1 - x}$ In $_{x}$ ) $_{2}$ O $_{3}$ alloys

Cited by in corpus (1)

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films

Low In solubility and band offsets in the small-x β-Ga2​O3​/(Ga1−x​Inx​)2​O3​ system

Abstract

References in corpus (1)

Cited by in corpus (1)

Low In solubility and band offsets in the small- $x$ $β$ -Ga $_{2}$ O $_{3}$ /(Ga $_{1 - x}$ In $_{x}$ ) $_{2}$ O $_{3}$ system