Crystal growth, resistivity and Hall effect of the delafossite metal PtCoO${}_2$

Abstract

We report single crystal growth of the delafossite oxide PtCoO${}_2$, and basic transport measurements on single crystals etched to well-defined geometries using focused ion beam techniques. The room temperature resistivity is 2.1 $\mu \Omega$ cm, and the Hall coefficient is consistent with the existence of one free electron per Pt. Although the residual resistivity ratio is greater than fifty, a slight upturn of resistivity is seen below 15 K. The angle dependence of the in-plane magnetoresistance is also reported.

arXiv commentThis draft is not under consideration for publication by any journal. Parts of it were extended and combined with other data into the paper posted as arXiv:1510.02439. However, some of the information in it is not included in the latter paper so it has been left on the archive to ensure open access to that information

Cited by in corpus (2)

• The properties of ultrapure delafossite metals
• Modelling the angle-dependent magnetoresistance oscillations of Fermi surfaces with hexagonal symmetry