Induced fractional valley number in graphene with topological defects
arXiv:1411.0494 · doi:10.1103/PhysRevB.91.035404
Abstract
We report on the possibility of valley number fractionalization in graphene with a topological defect that is accounted for in Dirac equation by a pseudomagnetic field. The valley number fractionalization is attributable to an imbalance on the number of one particle states in one of the two Dirac points with respect to the other and it is related to the flux of the pseudomagnetic field. We also discuss the analog effect the topological defect might lead in the induced spin polarization of the charge carriers in graphene.
References in corpus (12)
- The structure of suspended graphene sheets
- Valley filter and valley valve in graphene
- Electron fractionalization in two-dimensional graphenelike structures
- Midgap states and charge inhomogeneities in corrugated graphene
- Graphene as an electronic membrane
- Gauge field induced by ripples in graphene
- Effects of topological defects and local curvature on the electronic properties of planar graphene
- Charge inhomogeneities due to smooth ripples in graphene sheets
- Valley filter in strain engineered graphene
- Chiral Gauge Theory for Graphene
- Electron fractionalization for two-dimensional Dirac fermions
- Graphene with geometrically induced vorticity