Direct Probing Stacking Order and Electronic Spectrum of Rhombohedral Trilayer Graphene with Scanning Tunneling Microscopy

Abstract

Recently, the rhombohedral trilayer graphene (r-TLG) has attracted much attention because of its low-energy flat bands, which are predicted to result in many strongly correlated phenomena. Here, we demonstrate that it is possible to probe the stacking order and electronic spectrum of the r-TLG directly with a scanning tunneling microscopy around a monoatomic step edge of the top graphene layer. The tunneling spectra of the r-TLG exhibit four adjacent peaks, which are generated by the low-energy flat bands, flanking the charge neutrality point. Based on these spectra, the true energy gap and the energy gap at the K-point of the r-TLG are determined as about 9 meV and 23 meV, respectively. The observed features are well reproduced by a low-energy effective Hamiltonian.

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References in corpus (10)

• The structure of suspended graphene sheets
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
• Electronic states and Landau levels in graphene stacks
• Band Structure of ABC-Stacked Graphene Trilayers
• Breakdown of continuum mechanics for nanometer-wavelength rippling of graphene
• Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy
• Ferromagnetism in ABC-trilayer graphene
• Flat Bands near Fermi Level of Topological Line Defects on Graphite
• Flat band electrons and interactions in rhombohedral trilayer graphene

Cited by in corpus (3)

• Landau Quantization in Graphene Monolayer, Bernal Bilayer, and Bernal Trilayer on Graphite Surface
• Observation of Chirality Transition of Quasiparticles at Stacking Solitons in Trilayer Graphene
• Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders