paper

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

arXiv:1409.2598 · doi:10.1063/1.4906539

Abstract

The magnetic moment and magnetization in GaAs/Ga $_{0.84}$ In $_{0.16}$ As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $I^´$ -layer thicknesses near GaInAs-quantum well ( $\sim$ 3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga $_{0.84}$ In $_{0.16}$ As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.

8 pages, 3 figures