Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor

Abstract

We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$\alpha$ and K$\beta$. Moreover, we produced a fully depleted layer with a thickness of $500\mu \mathrm{m}$. The event-driven readout mode has already been successfully demonstrated.

7pages, 12figures, SPIE Astronomical Telescopes and Instrumentation 2014, Montreal, Quebec, Canada. appears as Proc. SPIE 9147, Space Telescopes and Instrumentation 2014: Ultraviolet to Gamma Ray

Cited by in corpus (8)

• Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure
• Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy
• Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area
• X-ray response evaluation in subpixel level for X-ray SOI pixel detectors
• Compensation of radiation damages for SOI pixel detector via tunneling
• Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy
• X-ray Performance of Back-Side Illuminated Type of Kyoto's X-ray Astronomical SOI Pixel Sensor, XRPIX
• Performance of SOI Pixel Sensors Developed for X-ray Astronomy