Low-temperature illumination and annealing of ultra-high quality quantum wells

Abstract

The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state.

References in corpus (2)

• Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters
• A new type of carbon resistance thermometer with excellent thermal contact at millikelvin temperatures

Cited by in corpus (7)

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• Anomalous Nematic States in High Half-Filled Landau Levels
• Electron-Hole Asymmetric Chiral Breakdown of Reentrant Quantum Hall States
• Effect of illumination on quantum lifetime in GaAs quantum wells
• Exploring Quantum Hall Physics at Ultra-Low Temperatures and at High Pressures