Effects of quantum interference on the electron transport in the semiconductor$/$benzene$/$semiconductor junction

Abstract

Using the tight-binding model and the generalized Green's function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically investigated. We show how the quantum interference sources, different contact positions and local gate, can control the transmission characteristics of the electrode/molecule/electrode junction. We also study the occurrence of anti-resonant states in the transmission probability function using a simple graphical scheme (introduced in Ref.[Phys. Chem. Chem. Phys, 2011, 13, 1431]) for different geometries of the contacts between the benzene molecule and semiconductor(silicon and titanium dioxide) electrodes.

arXiv comment11 pages, 12 figures

References in corpus (8)

• Simultaneous measurements of electronic conduction and Raman response in molecular junctions
• Theoretical Study of Electrical Conduction Through a Molecule Connected to Metallic Nanocontacts
• Controlling quantum transport through a single molecule
• Silicon-based molecular electronics
• Control of electron transport through Fano resonances in molecular wires
• Ballistic electron transport in stubbed quantum waveguides: experiment and theory
• Quantum interference effects in electron transport through nitrobenzene with pyridil anchor groups
• Quantum Interference Controlled Molecular Electronics

Cited by in corpus (3)

• Enhancing Thermoelectric Properties Through a Three-Terminal Benzene Molecule
• Out of equilibrium charge transport in molecular electronic devices
• Shot Noise of Charge and Spin Current of a Quantum Dot Coupled to Semiconductor Electrodes