Intrinsic magnetoresistance in metal films on ferromagnetic insulators

Abstract

We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall magnetoresistance" mechanism caused by a combined action of spin Hall and inverse spin Hall effects. Due to the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. is a bulk metal or interface effect. The interfacial Rashba induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance by its dependence on the metal film thickness.

References in corpus (5)

• Theory of spin Hall magnetoresistance
• Investigation of induced Pt magnetic polarization in Pt/Y3Fe5O12 bilayers
• Out-of-plane spin polarization from in-plane electric and magnetic fields
• Spin-Hall Conductivity and Electric Polarization in Metallic Thin Films
• Exchange energy and generalized polarization in the presence of spin-orbit coupling in two dimensions

Cited by in corpus (7)

• Spin-orbit torques from interfacial spin-orbit coupling for various interfaces
• Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators
• Evaluation of bulk-interface contributions to Edelstein magnetoresistance at metal/oxide interfaces
• Current-induced spin torque resonance of magnetic insulators affected by field-like spin-orbit torques and out-of-plane magnetizations
• Spin Hall noise
• Interfacial Rashba magnetoresistance of two-dimensional electron gas at LaAlO${}_3$/SrTiO${}_3$ interface
• Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures