Sublattice asymmetry of impurity doping in graphene: A review

Abstract

In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional Nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.

20 pages, 4 figures. Accepted for publication in Beilstein Journal of Nanotechnology

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• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Substrate-induced band gap opening in epitaxial graphene
• Vacancy induced magnetism in graphene and graphene ribbons
• Modeling disorder in graphene
• Sublattice ordering in a dilute ensemble of defects in graphene
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Cited by in corpus (2)

• Toward Moiré engineering in 2D materials via dislocation theory
• Nitrogen-Nitrogen Bonds Violate Stability of N-Doped Graphene