Multiferroic hexagonal ferrites (h-RFeO${}_3$, R=Y, Dy-Lu): an experimental review

Abstract

Hexagonal ferrites (h-RFeO${}_3$, R=Y, Dy-Lu) have recently been identified as a new family of multiferroic complex oxides. The coexisting spontaneous electric and magnetic polarizations make h-RFeO${}_3$ rare-case ferroelectric ferromagnets at low temperature. Plus the room-temperature multiferroicity and predicted magnetoelectric effect, h-RFeO${}_3$ are promising materials for multiferroic applications. Here we review the structural, ferroelectric, magnetic, and magnetoelectric properties of h-RFeO${}_3$. The thin film growth is also discussed because it is critical in making high quality single crystalline materials for studying intrinsic properties.

References in corpus (2)

• Three Dimensional Magnetic Correlations in Multiferroic LuFe2O4
• Cyrstal field splitting and optical band gap of hexagonal LuFeO${}_3$ films

Cited by in corpus (13)

• Ferroelectric Ferrimagnetic LiFe${}_2$F${}_6$: Charge Ordering Mediated Magnetoelectricity
• Epitaxy of hexagonal ABO${}_3$ quantum materials
• Magnetic structure and multiferroicity of Sc-substituted hexagonal YbFeO${}_3$
• Effects of biaxial strain on the improper multiferroicity in h-LuFeO3 films
• Effect of interface on epitaxy and magnetism in h-RFeO3/Fe3O4/Al2O3 films (R=Lu, Yb)
• Improper ferroelectricity in ultrathin hexagonal ferrites film
• Recent Progress on Multiferroic Hexagonal Rare-Earth Ferrites (h-RFeO3, R = Y,Dy-Lu)
• Low temperature Terahertz Spectroscopy of LaFeO${}_3$, PrFeO${}_3$, ErFeO${}_3$, and LuFeO${}_3$: Quasimagnon resonances and ground multiplet transitions
• Giant interfacial spin-Hall angle from Rashba-Edelstein effect revealed by the spin-Hall Hanle processes
• Dual mechanisms for transient capacitance anomaly in improper ferroelectrics
• Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface
• Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO${}_3$
• Persistent Interfacial Topological Hall Effect Demonstrating Electrical Readout of Topological Spin Structures in Insulators