Effect of Interlayer Spin-Flip Tunneling for Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion Systems
arXiv:1406.7110 · doi:10.7566/JPSJ.83.083701
Abstract
We investigate the effect of the interlayer spin-flip tunneling for the interlayer magnetoresistance under magnetic fields in alpha-(BEDT-TTF)2I3, which is a multilayer massless Dirac fermion system under pressure. The mean field of the spin-flip correlation associated with the interlayer Coulomb interaction enables the interlayer spin-flip tunneling. Assuming the non-vertical interlayer spin-flip tunneling, we calculate the interlayer magnetoresistance using the Kubo formula. The crossover magnetic field, at which the interlayer magnetoresistance changes from positive to negative is shifted by the Zeeman energy and in good agreement with the experiment.
References in corpus (5)
- Electric Field Effect in Atomically Thin Carbon Films
- Effects of the Zero-Mode Landau Level on Inter-Layer Magnetoresistance in Multilayer Massless Dirac Fermion Systems
- Spin and Valley Splittings in Multilayered Massless Dirac Fermion System
- Renormalization Effects on Quasi-Two-Dimensional Organic Conductor α-(BEDT-TTF)2I3
- Spin-Ordered States in Multilayer Massless Dirac Fermion Systems