Scanning-gate-induced effects and spatial mapping of a cavity
arXiv:1406.6823 · doi:10.1088/1367-2630/17/4/043043
Abstract
Tailored electrostatic potentials are the foundation of scanning gate microscopy. We present several aspects of the tip-induced potential on the two-dimensional electron gas. First, we give methods on how to estimate the size of the tip-induced potential. Then, a ballistic cavity is formed and studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced potential. It is shown how the potential of the cavity changes by tuning the system to a regime where conductance quantization in the constrictions formed by the tip and the top gates occurs. This conductance quantization leads to a unprecedented rich fringe pattern over the entire structure. Finally, the effect of electrostatic screening of the metallic top gates is discussed.
10 pages, 6 figures
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Cited by in corpus (13)
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- Interference features in scanning gate conductance maps of quantum point contacts with disorder
- Scanning gate experiments: from strongly to weakly invasive probes
- Partial local density of states from scanning gate microscopy
- Scanning gate imaging in confined geometries
- Classical origin of conductance oscillations in an integrable cavity
- Mode specific backscattering in a quantum point contact
- Signatures of folded branches in the scanning gate microscopy of ballistic electronic cavities
- Electron backscattering in a cavity: ballistic and coherent effects
- Accurate characterization of tip-induced potential using electron interferometry
- Imaging signatures of the local density of states in an electronic cavity
- Local signatures of electron-electron scattering in an electronic cavity
- Multitip scanning gate microscopy for ballistic transport studies in systems with two-dimensional electron gas