Photoluminescence of focused ion beam implanted Er${}^{3+}$:Y${}_2$SiO${}_5$ crystals

Abstract

Erbium doped low symmetry Y${}_2$SiO${}_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er${}^{3+}$-ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er${}^{3+}$:Y${}_2$SiO${}_5$ crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.

References in corpus (5)

• Quantum Storage of Photonic Entanglement in a Crystal
• Anisotropic rare-earth spin ensemble strongly coupled to a superconducting resonator
• Heralded quantum entanglement between two crystals
• Rare earth spin ensemble magnetically coupled to a superconducting resonator
• Spectrally narrow, long-term stable optical frequency reference based on a Eu${}^{3+}$:Y${}_2$SiO${}_5$ crystal at cryogenic temperature

Cited by in corpus (6)

• Production yield of rare-earth ions implanted into an optical crystal
• Hybrid quantum circuit with implanted erbium ions
• High-cooperativity coupling of a rare-earth spin ensemble to a superconducting resonator using yttrium orthosilicate as a substrate
• Angular dependent micro-ESR characterization of a locally doped Gd3+:Al2O3 system
• Development of Yttrium alloy ion source and its application in nanofabrication
• Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate