Photoluminescence of focused ion beam implanted Er${}^{3+}$:Y${}_2$SiO${}_5$ crystals

Abstract

Erbium doped low symmetry Y${}_2$SiO${}_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er${}^{3+}$-ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er${}^{3+}$:Y${}_2$SiO${}_5$ crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.

References in corpus (2)

• Quantum Storage of Photonic Entanglement in a Crystal
• Anisotropic rare-earth spin ensemble strongly coupled to a superconducting resonator

Cited by in corpus (3)

• Hybrid quantum circuit with implanted erbium ions
• High-cooperativity coupling of a rare-earth spin ensemble to a superconducting resonator using yttrium orthosilicate as a substrate
• Development of Yttrium alloy ion source and its application in nanofabrication