Exciton-plasmaritons in graphene-semiconductor structures

Abstract

We study strong coupling between plasmons in monolayer charge-doped graphene and excitons in a narrow gap semiconductor quantum well separated from graphene by a potential barrier. We show that the Coulomb interaction between excitons and plasmons result in mixed states described by a Hamiltonian similar to that for exciton-polaritons and derive the exciton-plasmon coupling constant that depends on system parameters. We calculate numerically the Rabi splitting of exciton- plasmariton dispersion branches for several semiconductor materials and find that it can reach values of up to 50 - 100 meV.

accepted to Phys. Rev. B

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Graphene plasmonics
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Dielectric function, screening, and plasmons in 2D graphene
• Manipulating infrared photons using plasmons in transparent graphene superlattices
• Dynamical polarization of graphene at finite doping
• Experimental observation of plasmons in a graphene monolayer resting on a two-dimensional subwavelength silicon grating