Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness
arXiv:1405.7738 · doi:10.1063/1.4879242
Abstract
We theoretically investigate thermal conductivity in silicon nanomeshes using Monte Carlo simulations of phonon transport. Silicon membranes of 100nm thickness with randomly located pores of 50nm diameter are considered. The effects of material porosity and pore surface roughness are examined. Nanomesh porosity is found to have a strong detrimental effect on thermal conductivity. At room temperature, a porosity of 50% results in ~80% reduction in thermal conductivity. Boundary roughness scattering further degrades thermal conductivity, but its effect is weaker. Thermal transport can additionally be affected by the specific arrangement of the pores along the transport direction.
arXiv comment23 pages, 5 figures
References in corpus (3)
Cited by in corpus (12)
- Monte Carlo phonon transport simulations in hierarchically disordered silicon nanostructures
- Low-dimensional phonon transport effects in ultra-narrow, disordered graphene nanoribbons
- Hierarchically nanostructured thermoelectric materials: Challenges and opportunities for improved power factors
- Large-scale molecular dynamics investigation of geometrical features in nanoporous Si
- Enhanced Phonon Boundary Scattering at High Temperatures in Hierarchically Disordered Nanostructures
- Phonon Bottleneck Identification in Disordered Nanoporous Materials
- Thermal rectification optimization in nanoporous Si using Monte Carlo simulations
- Thermal conductivity of disordered porous membranes
- Heat transfer in rough nanofilms and nanowires using Full Band Ab Initio Monte Carlo simulation
- Surface coupling effects on the capacitance of thin insulating films
- Computationally efficient Monte Carlo electron transport algorithm for nanostructured thermoelectric material configurations
- Super-suppression of long wavelength phonons in constricted nanoporous geometries