Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy
arXiv:1405.5141 · doi:10.1103/PhysRevB.90.041414
Abstract
We measured the lifetime of optically created valley polarization in single layer WS2 using transient absorption spectroscopy. The electron valley relaxation is very short (< 1ps). However the hole valley lifetime is at least two orders of magnitude longer and exhibits a temperature dependence that cannot be explained by single carrier spin/valley relaxation mechanisms. Our theoretical analysis suggests that a collective contribution of two potential processes may explain the valley relaxation in single layer WS2. One process involves direct scattering of excitons from K to K' valleys with a spin flip-flop interaction. The other mechanism involves scattering through spin degenerate Gamma valley. This second process is thermally activated with an Arrhenius behavior due to the energy barrier between Gamma and K valleys.
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- Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides
- Valley Dynamics of Excitons in Monolayer Dichalcogenides
- Theory of the Coherent Response of Magneto-Excitons and Magneto-Biexcitons in Monolayer Transition Metal Dichalcogenides
- Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
- Excitonic Transport and Intervalley Scattering in Exfoliated MoSe2 Monolayer Revealed by Four-Wave-Mixing Transient Grating Spectroscopy