Phonon-assisted tunnelling of electrons in a quantum well-quantum dot injection structure

Abstract

We study theoretically phonon-assisted relaxation and tunnelling in a system composed of a quantum dot which is coupled to a quantum well. Within the kp method combined with the Löwdin elimination, we calculate the electron states. We calculate acoustic phonon-assisted relaxation rates between the states in the quantum well and in the quantum dot and study the resulting electron kinetics. We show that transition efficiency crucially depends on the system geometry. We show also that under some conditions, transition efficiency can decrease with the temperature.

References in corpus (3)

• Phonon-assisted relaxation and tunneling in self-assembled quantum dot molecules
• Electron states in a double quantum dot with broken axial symmetry
• Phonon-assisted tunneling between singlet states in two-electron quantum dot molecules

Cited by in corpus (4)

• Carrier Dynamics in a Tunneling Injection Quantum Dot Semiconductor Optical Amplifier
• Spatial control of carrier capture in two-dimensional materials: Beyond energy selection rules
• Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers
• Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis