Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge5As30Se65 thin film

Abstract

In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA1) and another in the sub-bandgap (TA2) regions of a-Ge5As30Se65 thin films. Strikingly, these bands are thermally tunable and exhibit a unique contrasting characteristic: the magnitude of TA1 decreases while that of TA2 increases with increasing temperature. Further, the decay kinetics of these bands is strongly influenced by the temperature, which signifies a strong temperature-dependent exciton recombination mechanism. The induced absorption shows quadratic and the decay time constant shows linear dependence on the laser beam fluence.

17 pages, 6 figures

References in corpus (3)

• Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass
• Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films
• Role of Ge:As ratio in controlling the light-induced response of a-GexAs35-xSe65 thin films

Cited by in corpus (5)

• Quantification of nonlinear absorption in ternary As-Sb-Se chalcogenide glasses
• Near resonant nanosecond laser driven nonlinear optical response in As50S50 thin films
• First observation of temperature dependent lightinduced response of Ge25As10Se65 thin films
• Tailoring between network rigidity and nanosecond transient absorption in a-GexAs35-xSe65 thin films
• Ultrafast light-induced softening of chalcogenide thin films above the rigidity percolation transition