Conductance matrix of multi terminal semiconductor devices with edge channels

Abstract

This paper presents a method for determining the conductance matrix of multi terminal semiconductor structures with edge channels. This method appears to be applied within frameworks of the ordinary Landauer - uttiker formalism for the carrier transport analysis in the regime of both the quantum Hall Effect and the quantum spin Hall Effect. The proposed method proves to take into account principally the contribution of the probes resistance in the formation of the matrix conductance elements. Finally, the possibilities of the practical application of this method to develop new versions of analog cryptographic devices are discussed.

28 pages, 4 figures, Language - Russian

References in corpus (7)

• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Room-Temperature Quantum Hall Effect in Graphene
• Nonlocal edge state transport in the quantum spin Hall state
• Scattering matrix approach to the description of quantum electron transport
• Phase and amplitude response of "0.7 feature" caused by holes in silicon one-dimensional wires and rings
• Quantum point contact with large localized spin: fractional quantization of the ballistic conductance
• The conductance of the gated Aharonov - Bohm ring touching a quantum wire