Giant generic topological Hall resistivity of MnSi under pressure

Abstract

We report detailed low temperature magnetotransport and magnetization measurements in MnSi under pressures up to $\sim 12\mathrm{kbar}$. Tracking the role of sample quality, pressure transmitter, and field and temperature history allows us to link the emergence of a giant topological Hall resistivity $\sim 50\mathrm{n\Omega cm}$ to the skyrmion lattice phase at ambient pressure. We show that the remarkably large size of the topological Hall resistivity in the zero-temperature limit must be generic. We discuss various mechanisms which can lead to the much smaller signal at elevated temperatures observed at ambient pressure.

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• Berry Phase Effects on Electronic Properties
• Skyrmion Lattice in a Chiral Magnet
• Anomalous Hall effect
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• Emergent electrodynamics of skyrmions in a chiral magnet
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• Implications of the B20 Crystal Structure for the Magneto-electronic Structure of MnSi
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