Large conduction band and Fermi velocity spin splittings due to Coulomb interactions in single-layer MoS_{2}

Abstract

We study the effect of Coulomb interactions on the low energy band structure of single-layer transition metal dichalcogenide semiconductors using an effective low energy model. We show how a large conduction band spin splitting and a spin dependent Fermi velocity are generated in MoS${}_2$, as a consequence of the difference between the gaps of the two spin projections induced by the spin-orbit interaction. The conduction band and Fermi velocity spin splittings found are in agreement with the optical absorption energies of the excitonic peaks A, B measured in the experiments.

Revised version, as published in PRB

References in corpus (3)

• The electronic properties of graphene
• Supercritical Coulomb center and excitonic instability in graphene
• Supercritical Coulomb Impurities in Gapped Graphene

Cited by in corpus (3)

• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Excitons and trions in monolayer transition metal dichalcogenides: A comparative study between the multiband model and the quadratic single-band model
• Charge compressibility and quantum magnetic phase transition in MoS${}_2$