Li1.1(Zn1-xCrx)As: Cr doped I-II-V Diluted Magnetic Semiconductors in Bulk Form

Abstract

We report the synthesis and characterization of bulk form diluted magnetic semiconductors I-II-V Li1.1(Zn1-xCrx)As (x = 0.03, 0.05, 0.10, 0.15)with a cubic crystal structure identical to that of III-V GaAs and II-VI zinc-blende ZnSe. With p-type carriers created by excess Li, 10% Cr substitution for Zn results in a ferromagnetic ordering below TC ~ 218 K. Li(Zn,Cr)As represents another magnetic semiconducting system with the advantage of decoupling carriers and spins, where carriers are created by adding extra Li and spins are introduced by Cr substitution for Zn.

arXiv commentarXiv admin note: substantial text overlap with arXiv:1403.4019

References in corpus (10)

• Spintronics: Fundamentals and applications
• Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
• Theory of ferromagnetic (III,Mn)V semiconductors
• Origin and control of high-temperature ferromagnetism in semiconductors
• Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance
• Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As
• New Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping
• NMR Investigation of the Diluted Magnetic Semiconductor Li(Zn1-xMnx)P (x = 0.1)
• Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200K
• The synthesis and characterization of 1111-type diluted magnetic semiconductors (La1-xSrx)(Zn1-xTMx)AsO (TM = Mn, Fe, Co)

Cited by in corpus (2)

• New p- and n-type ferromagnetic semiconductors: Cr-doped BaZn2As2
• The Magnetic Properties of 1111-type Diluted Magnetic Semiconductor (La${}_{1-x}$Ba${}_x$)(Zn${}_{1-x}$Mn${}_x$)AsO in the Low Doping Regime