Theory of a field effect transistor based on semiconductor nanocrystal array

Abstract

We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array. Computer simulations and analytical theory are used to study the array screening and corresponding evolution of electron concentrations of the first and second layers with growing gate voltage. When first layer NCs have two electrons per NC the quantization energy gap between its 1S and 1P levels induces occupation of 1S levels of second layer NCs. Only at a larger gate voltage electrons start leaving 1S levels of second layer NCs and filling 1P levels of first layer NCs. By substantially larger gate voltage, all the electrons vacate the second layer and move to 1P levels of first layer NCs. As a result of this nontrivial evolution of the two layers concentrations, the surface conductivity of FET non-monotonically depends on the gate voltage. The same evolution of electron concentrations leads to non-monotonous behaviour of the differential capacitance.

References in corpus (6)

• The influence of Auger recombination on the performance of quantum-dot light-emitting diodes
• Heavily Doped Semiconductor Nanocrystal Quantum Dots
• The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
• Theory of hopping conduction in arrays of doped semiconductor nanocrystals
• Enhanced photocurrent in solution processed electronically coupled CdSe nanocrystals thin films
• Photoluminescence in array of doped semiconductor nanocrystals

Cited by in corpus (3)

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