Localized in-gap state in a single electron doped Mott insulator

Abstract

Motivated by the recent atomic-scale scanning tunneling microscope (STM) observation for a spatially localized in-gap state in an electron doped Mott insulator, we evaluate the local electronic state of the Hubbard model on the square lattice using the cluster perturbation theory. An in-gap state is found to exist below the upper Hubbard band around the dopant lattice site, which is consistent with the STM measurements. The emergence of this local in-gap state is accompanied with a rapid reduction of the double occupancy of electrons. A similar in-gap state is also found to exist on the triangular lattice. These results suggest that the in-gap state is an inherent feature of Mott insulators independent of the lattice structure.

References in corpus (3)

• Scanning tunneling spectroscopy of high-temperature superconductors
• Variational cluster approach to correlated electron systems in low dimensions
• Mott Physics and Topological Phase Transition in Correlated Dirac Fermions

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• Quantum cluster approach to the topological invariants in correlated Chern insulators
• Local Density of States induced near Impurities in Mott Insulators
• Dynamics of a single hole in the Heisenberg-Kitaev model: a self-consistent Born approximation study
• Unveiling Stripe-shaped Charge Density Modulations in Doped Mott Insulators