paper

Optical Absorption Measurement at 1550 nm on a Highly-Reflective Si/SiO Coating Stack

arXiv:1401.4916 · doi:10.1088/0264-9381/31/10/105005

Abstract

Future laser-interferometric gravitational wave detectors (GWDs) will potentially employ test mass mirrors from crystalline silicon and a laser wavelength of , which corresponds to a photon energy below the silicon bandgap. Silicon might also be an attractive high-refractive index material for the dielectric mirror coatings. Films of amorphous silicon (a-Si), however, have been found to be significantly more absorptive at than crystalline silicon (c-Si). Here, we investigate the optical absorption of a Si/SiO dielectric coating produced with the ion plating technique. The ion plating technique is distinct from the standard state-of-the-art ion beam sputtering technique since it uses a higher processing temperature of about 250C, higher particle energies, and generally results in higher refractive indices of the deposited films. Our coating stack was fabricated for a reflectivity of for s-polarized light at and for an angle of incidence of 44. We used the photothermal self-phase modulation technique to measure the coating absorption in s-polarization and p-polarization. We obtained and . These results correspond to an absorption coefficient which is lower than literature values for a-Si which vary from up to . It is, however, still orders of magnitude higher than expected for c-Si and thus still too high for GWD applications.

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