Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Abstract

We derive analytically the change of exciton fine structure splitting (FSS) under the external stresses in the self-assembled InAs/GaAs quantum dots using the Bir-Pikus model. We find that the FSS change is mainly due to the strain induced valence bands mixing and valence-conduction band coupling. The exciton polarization angle under strain are determined by the argument of the electron-hole off-diagonal exchange integrals. The theory agrees well with the empirical pseudopotential calculations.

References in corpus (5)

• Electric-field-induced coherent coupling of the exciton states in a single quantum dot
• Manipulating exciton fine-structure in quantum dots with a lateral electric field
• Highly-reduced Fine-structure splitting in InAs/InP quantum dots offering efficient on-demand 1.55 $\mu$m entangled photon emitter
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Cited by in corpus (3)

• Towards scalable entangled photon sources with self-assembled InAs/GaAs quantum dots
• Light-hole states in a strained quantum dot: numerical calculation and phenomenological models
• Buried Stressor Engineering for Position-Controlled InGaAs Quantum Dots with Local Density Variation for Integrated Quantum Photonics