Spin pumping through quantum dots

Abstract

We propose schemes for generating spin currents into a semiconductor by adiabatic or non-adiabatic pumping of electrons through interacting quantum dots. The appeal of such schemes lies in the possibility to tune the pumping characteristics via gate voltages that control the properties of the quantum dot. The calculations are based on a systematic perturbation expansion in the tunnel-coupling strength and the pumping frequency, expressed within a diagrammatic real-time technique. Special focus is put on the possibility of pure spin pumping, i.e., of pumping spin currents without charge currents.

Feature Article for Physica Status Solidi B

References in corpus (2)

• Coherent control of a single electron spin with electric fields
• Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

Cited by in corpus (8)

• Time local master equation connecting the Born and Markov approximations
• Gauge freedom in observables and Landsbergs nonadiabatic geometric phase: pumping spectroscopy of interacting open quantum systems
• Quantum charge pumping through resonant crossed Andreev reflection in superconducting hybrid junction of Silicene
• Thermodynamics and steady state of quantum motors and pumps far from equilibrium
• Green's function representation of spin pumping effect
• Spin backflow: a non-Markovian effect on spin pumping
• Nonadiabaticity in spin pumping under relaxation
• Quantum transport phenomena induced by time-dependent fields