Networks of silicon nanowires: a large-scale atomistic electronic structure analysis

Abstract

Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level, as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure.

Published version, 5+2 pages (including supplementary material)

References in corpus (3)

• Interband, intraband and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice
• Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties
• Networks of silicon nanowires: a large-scale atomistic electronic structure analysis

Cited by in corpus (4)

• Auxetic Nanomaterials: Recent Progress and Future Development
• Networks of silicon nanowires: a large-scale atomistic electronic structure analysis
• Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires
• Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study