Gate-tunable nearly total terahertz absorption in graphene with resonant metal back reflector
arXiv:1311.2120 · doi:10.1209/0295-5075/104/57002
Abstract
The gate-tunable terahertz (THz) absorption of graphene layers with a resonant metal back reflector (RMBF) is theoretically investigated. We demonstrate that the THz absorption of graphene with RMBF can vary from nearly negligible to nearly total by tuning the external gate voltage. This peculiar nearly total THz absorption can be attributed to the Fabry-Perot cavity effect, which enhances the absorption and reduces the reflection of graphene. The absorption spectra of the graphene-RMBF structure can also be tailored in bandwidth and center frequency by changing the thickness and dielectric constant of the spacer layer.
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