Fractional quantum Hall states in charge-imbalanced bilayer systems

Abstract

We study the fractional quantum Hall effect in a bilayer with charge-distribution imbalance induced, for instance, by a bias gate voltage. The bilayer can either be intrinsic or it can be formed spontaneously in wide quantum wells, due to the Coulomb repulsion between electrons. We focus on fractional quantum Hall effect in asymmetric bilayer systems at filling factor nu=4/11 and show that an asymmetric Halperin-like trial wavefunction gives a valid description of the ground state of the system.

6 pages, 5 figures, HMF-20 proceedings

References in corpus (5)

• Observation of a Fractional Quantum Hall State at $\nu =1/4$ in a Wide GaAs Quantum Well
• The plasma picture of the fractional quantum Hall effect with internal SU(K) symmetries
• Second Generation of Composite Fermions in the Hamiltonian Theory
• Fractional quantum Hall state at ν=1/4 in a wide quantum well
• A Quantized $\nu =5/2$ State in a Two-Subband Quantum Hall System