How much better are InGaN/GaN nanodisks than quantum wells - oscillator strength enhancement and changes in optical properties
arXiv:1309.6264 · doi:10.1063/1.4864083
Abstract
We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement results from significant strain relaxation in nanodisks less than 100 nm in diameter. Meanwhile, the radiative decay rate is only improved by 10 folds due to strong reduction of the local density of photon states in small nanodisks. Further increase in the radiative decay rate can be achieved by engineering the local density of photon states, such as adding a dielectric coating.
Accepted by Applied Physics Letters, 3 figures, 5 pages, Supplementary Materials available in the source package
References in corpus (4)
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- Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots
- How much better are InGaN/GaN nanodisks than quantum wells - oscillator strength enhancement and changes in optical properties
- Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides
Cited by in corpus (4)
- How much better are InGaN/GaN nanodisks than quantum wells - oscillator strength enhancement and changes in optical properties
- Site-controlled InGaN/GaN single-photon-emitting diode
- Carrier dynamics in site- and structure-controlled InGaN/GaN quantum dots
- Observation of Disorder State Coupling to Excitons in InGaN Disks in GaN Nanowires