Thermoelectric properties of $\beta$-FeSi${}_{\text{2}}$

Abstract

We investigate the thermoelectric properties of $\beta$-FeSi${}_{\text{2}}$ using first principles electronic structure and Boltzmann transport calculations. We report a high thermopower for both \textit{p}- and \textit{n}-type $\beta$-FeSi${}_{\text{2}}$ over a wide range of carrier concentration and in addition find the performance for \textit{n}-type to be higher than for the \textit{p}-type. Our results indicate that, depending upon temperature, a doping level of 3$\times 10{}^{20}$ - 2$\times 10{}^{21}$ cm${}^{-3}$ may optimize the thermoelectric performance.

References in corpus (1)

• BoltzTraP. A code for calculating band-structure dependent quantities

Cited by in corpus (4)

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