Electronic band gaps and transport properties in aperiodic bilayer graphene superlattices of Thue-Morse sequence

Abstract

We investigate electronic band structure and transport properties in bilayer graphene superlattices of Thue-Morse sequence. It is interesting to find that the zero-$\bar{k}$ gap center is sensitive to interlayer coupling $t^{\prime }$, and the centers of all gaps shift versus $t^{\prime }$ at a linear way. Extra Dirac points may emerge at $k_y\ne$0, and when the extra Dirac points are generated in pairs, the electronic conductance obeys a diffusive law, and the Fano factor tends to be 1/3 as the order of Thue-Morse sequence increases. Our results provide a flexible and effective way to control the transport properties in graphene.

5 pages, 6 figures. Accepted for publication in Applied Physics Letters

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Colloquium: The transport properties of graphene: An introduction
• Quantum-limited shot noise in graphene
• Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
• Periodically rippled graphene: growth and spatially resolved electronic structure
• Design of electron wave filters in monolayer graphene by tunable transmission gap
• Magnetic Impurities in Graphene

Cited by in corpus (7)

• Strain induced edge magnetism at zigzag edge in graphene quantum dot
• Tuning the Fano factor of graphene via Fermi velocity modulation
• Self-similar transmission properties of aperiodic Cantor potentials in gapped graphene
• Electronic band gaps and transport properties in periodically alternating mono- and bi-layer graphene superlattices
• Electronic Bloch oscillation in bilayer graphene gradient superlattices
• Extended transfer matrix method for electron transmission in anisotropic 2D materials: Interplay of strain and (a)periodicity of potentials
• Equivalence classes of Fibonacci lattices and their similarity properties