Pulsed Laser Deposition of High-Quality Thin Films of the Insulating Ferromagnet EuS

Abstract

High-quality thin films of the ferromagnetic-insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al2O3 (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties open the gate for novel devices that require a true ferromagnetic insulator.

4 pages, 4 figures

References in corpus (4)

• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface
• Inverse proximity effect in superconductor-ferromagnet bilayer structures
• Modified Sagnac interferometer for high-sensitivity magneto-optic measurements atcryogenic temperatures

Cited by in corpus (4)

• Creation of equal-spin triplet superconductivity at the Al/EuS interface
• Superconductivity near a magnetic domain wall
• Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi${}_x$Sb${}_{1-x}$)${}_2$Te${}_3$ - EuS Bilayers
• Theory of quantum-geometric charge and spin Josephson diode effects in strongly spin-polarized hybrid structures with noncoplanar spin textures