Time-dependent relaxation of strained silicon-on-insulator lines using a partially coherent x-ray nanobeam
arXiv:1306.3367 · doi:10.1103/PhysRevLett.111.215502
Abstract
We report on the quantitative determination of the strain map in a strained Silicon-On-Insulator (sSOI) line with a 200x70 nm^2 cross-section. In order to study a single line as a function of time, we used an X-ray nanobeam with relaxed coherence properties as a compromise between beam size, coherence and intensity. We demonstrate how it is possible to reconstruct the line deformation at the nanoscale, and follow its evolution as the line relaxes under the influence of the X-ray nanobeam.
5 pages, 4 figures
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