Photoluminescence in Ga/Bi co-doped silica glass

Abstract

Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active center (BAC) was identified as the analogue of Al-connected BAC. Visible and infrared photoluminescence (PL) were investigated in a wide temperature range of 1.46-300 K. Based on the results of the continuous wave (CW) and time resolved spectroscopy we identify the centers emitting in the spectral region of 480-820 nm as Bi${}^{+}$ ions. The near infrared (NIR) PL around 1100 nm consists of two bands. While the first one can be ascribed to the transition in Bi${}^{+}$ ion, the second band is presumably associated to defects. We put in evidence the energy transfer between Bi${}^{+}$ ions and the second NIR emitting center via quadrupole-quadrupole and dipole-quadrupole mechanisms of interactions. Finally, we propose the energy level diagram of Bi${}^{+}$ ion interacting with this defect.

15 pages, 12 figures, submitted to Optics Express

References in corpus (4)

• Stretched Exponential Relaxation Arising from a Continuous Sum of Exponential Decays
• IR Bismuth active centers in optical fibers: Combined excitation-emission spectroscopy
• Near-infrared luminescence in bismuth-doped TlCl crystal
• Centers of near-infrared luminescence in bismuth-doped TlCl and CsI crystals