Itinerant origin of the ferromagnetic quantum critical point in Fe(Ga,Ge)3

Abstract

The electronic structure and magnetic properties of FeGa3 and doped FeGa3 are studied using density functional calculations. An itinerant mechanism for ferromagnetism is found both for n-type doping with Ge and also for p-type doping. Boltzmann transport calculations of the thermopower are also reported.

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Cited by in corpus (9)

• Phonon-drag effect in FeGa3
• Interplay between localized and itinerant magnetism in Co substituted FeGa${}_3$
• Electronic correlations in FeGa${}_3$ and the effect of hole doping on its magnetic properties
• Towards ferromagnetic quantum criticality in FeGa3-xGex: 71Ga NQR as a zero field microscopic probe
• Itinerant magnetism in doped semiconducting beta-FeSi2 and CrSi2
• Transitions from a Kondo-like diamagnetic insulator into a modulated ferromagnetic metal in ${\mathrm{FeGa}}_{3-\mathbf{y}}{\mathrm{Ge}}_{\mathbf{y}}$
• Emergence of competing magnetic interactions induced by Ge doping in the semiconductor FeGa3
• Magnetic order of intermetallic FeGa${}_{3-y}$Ge${}_y$ studied by $\mu$SR and ${}^{57}$Fe Mössbauer spectroscopy
• Spin dynamics of FeGa${}_{3-x}$Ge${}_x$ studied by Electron Spin Resonance