Voltage-controlled spin injection with an endohedral fullerene CoC dimer
arXiv:1304.7901 · doi:10.1063/1.4803471
Abstract
Spin-dependent transport through an endohedral fullerene Co@C dimer with gold electrodes is explored theoretically using density functional and extended Hückel theory. Density of states spin polarizations up to 95%, due to spin-splitting of Co 3d orbitals, are found by varying the gate and/or bias voltage. The current-voltage characteristics and strong (up to 100%) spin polarization of the current indicate that the device can be utilized for highly efficient spin injection into nonmagnetic conductors. This finding opens the way to the realization of electrostatically tuned spintronic nano devices less than 2 nanometers in size, without ferromagnetic electrodes.
5 pages, 4 figures
References in corpus (8)
- Single-Molecule Device Prototypes for Protein-Based Nanoelectronics: Negative Differential Resistance and Current Rectification in Oligopeptides
- Identification of the Molecule-Metal Bonding Geometries of Molecular Nanowires
- Tight Binding Model of Mn12 Single Molecule Magnets: Electronic and Magnetic Structure and Transport Properties
- Scanning tunneling spectroscopy and Dirac point resonances due to a single Co adatom on gated graphene
- Ligand-based transport resonances of single-molecule magnet spin filters: Suppression of the Coulomb blockade and determination of the orientation of the magnetic easy axis
- Identification of the Atomic Scale Structures of the Gold-Thiol Interfaces of Molecular Nanowires by Inelastic Tunneling Spectroscopy
- First-principles study of ultrathin (2 \times 2) Gd nanowires encapsulated in carbon nanotubes
- Strong Spin-Filtering and Spin-Valve Effects in a Molecular V-C60-V Contact
Cited by in corpus (4)
- Valley currents and non-local resistances of graphene nanostructures with broken inversion symmetry from the perspective of scattering theory
- Mechanism of the enhanced conductance of a molecular junction under tensile stress
- Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions
- Gate-controlled valley transport and Goos-Hänchen effect in monolayer WS