Properties of single-layer graphene doped by nitrogen with different concentrations
arXiv:1304.7445 · doi:10.1140/epjb/e2014-40719-y
Abstract
Graphene has vast promising applications on the nanoelectronics and spintronics because of its unique magnetic and electronic properties. Making use of an ab initio spin-polarized density functional theory, implemented by the method of Heyd-Scuseria-Ernzerhof 06(HSE06) hybrid functional, the properties of nitrogen substitutional dopants in semi-metal monolayer graphene were investigated. We found from our calculation, that introducing nitrogen doping would possibly break energy degeneracy with respect to spin(spin symmetry breaking) at some doping concentrations with proper dopant configurations. The spin symmetry breaking would cause spin-polarized effects, which induce magnetic response in graphene. This paper systematically analyzed the dependence of magnetic moments and band gaps in graphene on doping concentrations of nitrogen atoms, as well as dopant configurations.
17pages,4figures,5tables
References in corpus (8)
- Electric Field Effect in Atomically Thin Carbon Films
- Carrier transport in 2D graphene layers
- Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
- Ab initio Study of Graphene on SiC
- Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
- Half-metallic graphene nanodots
- Long-range interactions between substitutional nitrogen dopants in graphene: electronic properties calculations
- Adsorption of Hydrogen in Graphene without Band Gap Opening at the Dirac Point