Excitation-induced dephasing in a resonantly driven InAs/GaAs quantum dot

Abstract

We report on coherent emission of the neutral exciton state in a single semiconductor self-assembled InAs/GaAs quantum dot embedded in a one-dimensional waveguide, under resonant picosecond pulsed excita- tion. Direct measurements of the radiative lifetime and coherence time are performed as a function of excitation power and temperature. The characteristic damping of Rabi oscillations which is observed, is attributed to an excitation-induced dephasing due to a resonant coupling between the emitter and the acoustic phonon bath of the matrix. Other sources responsible for the decrease of the coherence time have been evidenced, in particular an enhancement of the radiative recombination rate due to the resonant strong coupling between the dot and the one-dimensional optical mode. As a consequence, the emission couples very efficiently into the waveguide mode leading to an additional relaxation term of the excited state population.

References in corpus (10)

• Quantum nature of a strongly-coupled single quantum dot-cavity system
• Bright single-photon sources in bottom-up tailored nanowires
• Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity
• Interference of Single Photons from Two Separate Semiconductor Quantum Dots
• Phonon induced Rabi frequency renormalization of optically driven single InGaAs/GaAs quantum dots
• Quantum dot Rabi rotations beyond the weak exciton-phonon coupling regime
• Resonant nature of phonon-induced damping of Rabi oscillations in quantum dots
• Photon statistics from a resonantly driven quantum dot
• Resonant excitonic emission of a single quantum dot in the Rabi regime
• Driving-dependent damping of Rabi oscillations in two-level semiconductor systems

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