Tunable spontaneous emission from layered graphene/dielectric tunnel junctions
arXiv:1303.2032 · doi:10.1109/JQE.2014.2308976
Abstract
There has been a rapidly growing interest in optoelectronic properties of graphene and associated structures. Despite the general belief on absence of spontaneous emission in graphene, which is normally attributed to its unique ultrafast carrier momentum relaxation mechanisms, there exist a few recent evidences of strong optical gain and spontaneous light emission from mono-layer graphene, supported by observations of dominant role of out-of-plane excitons in polycyclic aromatic hydrocarbons. In this article, we develop a novel concept of light emission and optical gain from simple vertical graphene/dielectric tunnel junctions. It is theoretically shown that the possible optical gain or emission spectrum will be easily tunable by the applied voltage. We present details of quantum mechanical calculations and perform an exact analysis of field-assisted tunneling using transfer matrices combined with expansion on Airy's functions.
References in corpus (14)
- The electronic properties of graphene
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Integrated Circuits Based on Bilayer MoS2 Transistors
- Extraordinary room-temperature photoluminescence in WS2 monolayers
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- Ultrafast Photoluminescence from Graphene
- Snapshots of non-equilibrium Dirac carrier distributions in graphene
- Strong Coulomb drag and broken symmetry in double-layer graphene
- Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition
- Electronic structure, imaging contrast and chemical reactivity of graphene moiré on metals
- Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry
- Field effect doping of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations
- Two-dimensional bipolar junction transistors
- Optical Modulation by Conducting Interfaces
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- Plasmon-assisted resonant tunneling in graphene-based heterostructures
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