Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

Abstract

The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.

11 pages, 8 figures, accepted for publication in Journal of Applied Physics

References in corpus (2)

• Dynamics of ripple formation on silicon surfaces by ultrashort laser pulses in sub-ablation conditions
• Formation of femtosecond laser induced surface structures on silicon : insights from numerical modeling and single pulse experiments

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