paper

Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

arXiv:1302.4603 · doi:10.1103/PhysRevB.87.155146

Abstract

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

9 pages, 8 figures. Submitted to Phys. Rev. B