Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance
arXiv:1301.6026 · doi:10.1063/1.4893521
Abstract
Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corresponding to the insulator metal phase transition.
Pages 13, figures 9, references 10