Carrier localization and out of plane anisotropic magnetoresistance in $N{d}_{0.55-x}S{m}_{x}S{r}_{0.45}Mn{O}_3$ thin films

Abstract

The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.

12 pages, 5 figures, Applied Physics Letters Applied Physics Letters (2012)