Ordered-Current State of Electrons in Bilayer Graphene
arXiv:1301.3540 · doi:10.1103/PhysRevB.88.045410
Abstract
Based on the four-band continuum model, we study the ordered-current state (OCS) for electrons in bilayer graphene at the charge neutrality point. The present work resolves the puzzles that (a) the energy gap increases significantly with increasing the magnetic field , (b) the energy gap can be closed by the external electric field of either polarization, and (c) the particle-hole spectrum is asymmetric in the presence of , all these as observed by the experiment. We also present the prediction of the hysteresis energy gap behavior with varying , which explains the existing experimental observation on the electric conductance at weak . The large energy gap of the OCS is shown to originate from the disappearance of Landau levels of = 0 and 1 states in conduction/valence band. By comparing with the existing models and the experiments, we conclude that the OCS is a possible ground state of electrons in bilayer graphene.
9.2 pages, 10 figures
References in corpus (12)
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Asymmetry gap in the electronic band structure of bilayer graphene
- Pseudospin Magnetism in Graphene
- Quantum Anomalous Hall State in Bilayer Graphene
- Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States
- Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
- Ordered Loop Current States in Bilayer Graphene
- Compressibility of bilayer graphene
- On the coexistence of antiferromagnetism and d + i d superconducting correlations in the graphene bilayer
- Possible Broken Inversion and Time-Reversal Symmetry State of Electrons in Bilayer Graphene
- Absence of broken inversion symmetry phase of electrons in bilayer graphene under charge density fluctuations
Cited by in corpus (6)
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- Valley-Selective Topological Ordered States in Irradiated Bilayer Graphene
- Integer Quantum Hall Effect of Interacting Electrons in Graphene
- Spin-Polarized-Current State of Electrons in Bilayer Graphene
- Current orderings of interacting electrons in bilayer graphene
- Phase boundary of spin-polarized-current state of electrons in bilayer graphene