Hybrid high-temperature superconductor-semiconductor tunnel diode

Abstract

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+δ combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

References in corpus (7)

• How Cooper pairs vanish approaching the Mott insulator in Bi2Sr2CaCu2O8+d
• Electronic Origin of the Inhomogeneous Pairing Interaction in the High-Tc Superconductor Bi2Sr2CaCu2O8+d
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• Stability of exfoliated Bi${}_2$Sr${}_2$Dy${}_x$Ca${}_{1-x}$Cu${}_2$O${}_{8+\delta }$ studied by Raman microscopy
• A proximity induced pseudogap - evidence for preformed pairs