Enhanced thermoelectric performance in TiNiSn-based half-Heuslers

Abstract

Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-melted TiNiSn-based ingots. This promising conversion efficiency is due to a low lattice thermal conductivity, which is attributed to excess nickel in the half-Heusler structure.

References in corpus (2)

• Theory of enhancement of thermoelectric properties of materials with nanoinclusions
• Covalent bonding and the nature of band gaps in some half-Heusler compounds

Cited by in corpus (7)

• Electronic fitness function for screening semiconductors as thermoelectric materials
• The role of grain boundary scattering in reducing the thermal conductivity of polycrystalline XNiSn (X = Hf, Zr, Ti) half-Heusler alloys
• Electronic structure of Zr-Ni-Sn systems: role of clustering and nanostructures in Half-Heusler and Heusler limits
• Reduced thermal conductivity of TiNiSn/HfNiSn superlattices
• Examining the thermal conductivity of half-Heusler alloy TiNiSn by first-principles calculations
• Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure
• Phonon broadening from supercell lattice dynamics: random and correlated disorder