Exciton diffusion in semiconducting single-wall carbon nanotubes studied by transient absorption microscopy

Abstract

Spatiotemporal dynamics of excitons in isolated semiconducting single-walled carbon nanotubes are studied using transient absorption microscopy. Differential reflection and transmission of an 810-nm probe pulse after excitation by a 750-nm pump pulse are measured. We observe a bi-exponentially decaying signal with a fast time constant of 0.66 ps and a slower time constant of 2.8 ps. Both constants are independent of the pump fluence. By spatially and temporally resolving the differential reflection, we are able to observe a diffusion of excitons, and measure a diffusion coefficient of 200 cm2/s at room temperature and 300 cm2/s at lower temperatures of 10 K and 150 K.

arXiv comment6 pages, 4 figures

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Cited by in corpus (6)

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• Exciton diffusion, end quenching, and exciton-exciton annihilation in individual air-suspended carbon nanotubes
• Global Equilibrium and Non-Equilibrium Theory of Hopping Exciton Transport in Disordered Semiconductors
• First-passage theory of exciton population loss in single-walled carbon nanotubes reveals micron-scale intrinsic diffusion lengths
• Dynamics of optically injected currents in carbon nanotubes
• DECaNT: Simulation Tool for Diffusion of Excitons in Carbon Nanotube Films